Jump to content

Recommended Posts

Posted

Exercise: Considering an intrinsic silicon bar at room temperature 300 K where concentration of electrons and holes with acceptor type impurities ( type P) in a concentration of 4*10^17 cm-3., q = 1.6*10^ (-19)C, kT=0.0259 eV, ni = 1.45*10^(10)cm^(-3), Eg=1.1 eV. I'm having a hard time finding Ec and Ev, if I use the equation

 

image.png.fa97dc2e02fb16d160a0bf618a76284b.pngimage.png.6ad2bcd7b007d2361a16a8ed281e2a76.png

I lack data to get this reference if I use the concept of a graph, what I need is to find the value of Ec and Ev. 

If I describe that Ef -Ec = - Eg/2, the values are very high

 

image.png.b8a262d9a097b3309d644198db2964bd.png

 

there's another equation missing that I'm not able to fit here I don't know if I should be Fermi Energy, but if I insert it as a P-type material, the value is still taken

 

image.thumb.png.6af6e0d58002bc959dd0a404fdbdfd3b.png

 

 

image.png.778ae72ffa7c11a646b11cf7a0749d36.png

 

image.png

image.png

Create an account or sign in to comment

You need to be a member in order to leave a comment

Create an account

Sign up for a new account in our community. It's easy!

Register a new account

Sign in

Already have an account? Sign in here.

Sign In Now
×
×
  • Create New...

Important Information

We have placed cookies on your device to help make this website better. You can adjust your cookie settings, otherwise we'll assume you're okay to continue.