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Posted

In such nano-size transistor as in MOSFETs, how probable is the dielectric going to break down at normal operating electric field or stressing voltage?

 

There are many factors that will aid dielectric breakdown in the metal oxide layer, example localized high temperature, dieletric crystal defects, dielectric strength, applied gate voltage, size of the transistor(thereby size of the oxide layer), etc.

 

But my question is that since many factors cause DB, how does manufacturers of MOSFETs ensure that lower percentage of faultly transistors is produced in the market? The moment DB occurs in any transistor in a processor chip for example, and mind you a Pentium 4 processor consists billions of transistors, the I-V characteristics of that DB transistor degrades into ohmic and not transistor-like anymore. This will affect the overall performance and quality of the whole processor chip as a whole.

Posted

all transistors have a working life measured in Switches, a FET doesn`t actualy "Switch" exactly and so it`ll last a little longer.

the A K part if not abused will keep going regardless the Junction point at Gate is the critical area, they are VERY susceptible to over Voltage, and the MO layer can easily get a hole blown through it like a Mortar round in a butter mountain!

 

Igfets and Jugfets are also as susceptible GaAsFETs are a little more tollerant though :)

 

in production (factories) there is special air con as well as conductive mats and straps to keep all at the same PD, thus avoiding DB :)

Posted

In modelling dieelectric breakdown using the percolation path effective resistance model, Why can we use ohm's law to model the resistance of the percolation path and even the resistance of the inverting channel formed under the dielectric?

 

Another question, in localized heating effect, it will cause dopant redistribution. What is the exact mechanism for activating these dopant atoms?

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