IBM scientists achieve storage memory breakthrough

[EdEarl]

Phys.org

 

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM).

 

The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But in the last several years PCM has attracted the industry's attention as a potential universal memory technology based on its combination of read/write speed, endurance, non-volatility and density. For example, PCM doesn't lose data when powered off, unlike DRAM, and the technology can endure at least 10 million write cycles, compared to an average flash USB stick, which tops out at 3,000 write cycles.

Desirable, power-on without reloading the operating system. Reset will be necessary as errors make an operating system unstable.

[iNow]

Fascinating. I know also that they're partnering with SAP doing work with some in-memory processing called HANA. Will be furious [EDIT: curious; thx autocorrect!] how all of this shakes out in the next few years.

Edited May 18, 2016 by iNow

[John Cuthber]

Who remembers magnetic bubble memory?

[Strange]

Who remembers magnetic bubble memory?

 

 

I do!

 

At a recent tradeshow I was talking to the guys from Everspin who produce modern magnetic memory devices. Again, combining many of the advantages of different memory types: non-volatile, low-power, fast access times, random access. But density seems to be a problem (compared to DRAM, anyway).

[EdEarl]

DRAM and disk technologies improved faster than bubble memories, and prevented its being widely adopted. The introduction of flash RAM displaced bubble memory from its niche.

Edited May 18, 2016 by EdEarl